TY - JOUR
T1 - Elimination of interface states in the GaAs band-gap by cyanide treatment
T2 - XPS measurements under bias
AU - Kubota, Tomohiro
AU - Ivančo, Ján
AU - Takahashi, Masao
AU - Yoneda, Kenji
AU - Todokoro, Yoshihiro
AU - Kobayashi, Hikaru
N1 - Funding Information:
We are grateful to Dr. Masami Tatsumi of Sumitomo Electric Industries, Ltd. for providing the GaAs wafers. One of us (JI) acknowledges a fellowship granted by Japan Society for the Promotion of Science and Slovak VEGA grant agency, the project No. 2/5081/98.
PY - 2003/4/10
Y1 - 2003/4/10
N2 - Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from "XPS measurements under bias." The interface state spectra have peaked-structure at 0.7 and 0.9 eV above the valence band maximum and they are attributed to (++/+) and (+/0) transitions of AsGa antisite defects at the interface. When cyanide treatment (i.e., the immersion in a KCN aqueous solution followed by the rinse in boiling water) is performed after the deposition of the silicon oxide layer, the interface state density is decreased to ∼ 50%, resulting in the partial unpinning of the Fermi level.
AB - Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from "XPS measurements under bias." The interface state spectra have peaked-structure at 0.7 and 0.9 eV above the valence band maximum and they are attributed to (++/+) and (+/0) transitions of AsGa antisite defects at the interface. When cyanide treatment (i.e., the immersion in a KCN aqueous solution followed by the rinse in boiling water) is performed after the deposition of the silicon oxide layer, the interface state density is decreased to ∼ 50%, resulting in the partial unpinning of the Fermi level.
KW - Crystalline-amorphous interfaces
KW - Gallium arsenide
KW - Interface states
KW - Metal-oxide-semiconductor (MOS) structures
KW - Semiconductor-insulator interfaces
KW - Silicon oxides
KW - X-ray photoelectron spectroscopy
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U2 - 10.1016/S0039-6028(03)00263-2
DO - 10.1016/S0039-6028(03)00263-2
M3 - Article
AN - SCOPUS:0037430904
VL - 529
SP - 329
EP - 337
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 3
ER -