Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias

Tomohiro Kubota, Ján Ivančo, Masao Takahashi, Kenji Yoneda, Yoshihiro Todokoro, Hikaru Kobayashi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from "XPS measurements under bias." The interface state spectra have peaked-structure at 0.7 and 0.9 eV above the valence band maximum and they are attributed to (++/+) and (+/0) transitions of AsGa antisite defects at the interface. When cyanide treatment (i.e., the immersion in a KCN aqueous solution followed by the rinse in boiling water) is performed after the deposition of the silicon oxide layer, the interface state density is decreased to ∼ 50%, resulting in the partial unpinning of the Fermi level.

Original languageEnglish
Pages (from-to)329-337
Number of pages9
JournalSurface Science
Volume529
Issue number3
DOIs
Publication statusPublished - 2003 Apr 10

Keywords

  • Crystalline-amorphous interfaces
  • Gallium arsenide
  • Interface states
  • Metal-oxide-semiconductor (MOS) structures
  • Semiconductor-insulator interfaces
  • Silicon oxides
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias'. Together they form a unique fingerprint.

Cite this