Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

Qingfang Xu, Peipei Zhu, Qingyun Sun, Rong Tu, Meijun Yang, Song Zhang, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep  = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

Original languageEnglish
Pages (from-to)662-666
Number of pages5
JournalApplied Surface Science
Volume426
DOIs
Publication statusPublished - 2017 Dec 31

Keywords

  • 3C-SiC
  • Elimination of double position domains (DPDs)
  • Epitaxial growth
  • Laser CVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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