Abstract
Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.
Original language | English |
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Pages (from-to) | 662-666 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 426 |
DOIs | |
Publication status | Published - 2017 Dec 31 |
Keywords
- 3C-SiC
- Elimination of double position domains (DPDs)
- Epitaxial growth
- Laser CVD
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films