Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

Qingfang Xu; Peipei Zhu; Qingyun Sun; Rong Tu; Meijun Yang; Song Zhang; Lianmeng Zhang; Takashi Goto; Jiasheng Yan; Shusen Li

doi:10.1016/j.apsusc.2017.07.239

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

Qingfang Xu, Peipei Zhu, Qingyun Sun, Rong Tu, Meijun Yang, Song Zhang, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T _dep ) and vanished at T _dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

Original language	English
Pages (from-to)	662-666
Number of pages	5
Journal	Applied Surface Science
Volume	426
DOIs	https://doi.org/10.1016/j.apsusc.2017.07.239
Publication status	Published - 2017 Dec 31

Keywords

3C-SiC
Elimination of double position domains (DPDs)
Epitaxial growth
Laser CVD

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2017.07.239

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Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD. / Xu, Qingfang; Zhu, Peipei; Sun, Qingyun; Tu, Rong; Yang, Meijun; Zhang, Song; Zhang, Lianmeng; Goto, Takashi; Yan, Jiasheng; Li, Shusen.

In: Applied Surface Science, Vol. 426, 31.12.2017, p. 662-666.

Research output: Contribution to journal › Article › peer-review

@article{11921cb999454044bbfb92c45983bba0,

title = "Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD",

abstract = " Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed. ",

keywords = "3C-SiC, Elimination of double position domains (DPDs), Epitaxial growth, Laser CVD",

author = "Qingfang Xu and Peipei Zhu and Qingyun Sun and Rong Tu and Meijun Yang and Song Zhang and Lianmeng Zhang and Takashi Goto and Jiasheng Yan and Shusen Li",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Nos. 51372188, and 51521001) and by the 111 Project (B13035). This research was also supported by the International Science & Technology Cooperation Program of China (2014DFA53090) and the Natural Science Foundation of Hubei Province, China (2016CFA006), and the Fundamental Research Funds for the Central Universities (WUT: 2017II43GX, 2017III032, 2017-YB-004). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = dec,

day = "31",

doi = "10.1016/j.apsusc.2017.07.239",

language = "English",

volume = "426",

pages = "662--666",

journal = "Applied Surface Science",

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T1 - Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

AU - Xu, Qingfang

AU - Zhu, Peipei

AU - Sun, Qingyun

AU - Tu, Rong

AU - Yang, Meijun

AU - Zhang, Song

AU - Zhang, Lianmeng

AU - Goto, Takashi

AU - Yan, Jiasheng

AU - Li, Shusen

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Nos. 51372188, and 51521001) and by the 111 Project (B13035). This research was also supported by the International Science & Technology Cooperation Program of China (2014DFA53090) and the Natural Science Foundation of Hubei Province, China (2016CFA006), and the Fundamental Research Funds for the Central Universities (WUT: 2017II43GX, 2017III032, 2017-YB-004). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/12/31

Y1 - 2017/12/31

N2 - Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

AB - Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

KW - 3C-SiC

KW - Elimination of double position domains (DPDs)

KW - Epitaxial growth

KW - Laser CVD

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M3 - Article

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JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

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Keywords

ASJC Scopus subject areas

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