Elemental process of amorphization induced by electron irradiation in Si

Jun Yamasaki, Seiji Takeda, Kenji Tsuda

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure 14 in c-Si and it becomes an amorphous embryo.

Original languageEnglish
Article number115213
Pages (from-to)1152131-11521310
Number of pages10369180
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
DOIs
Publication statusPublished - 2002 Mar 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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