TY - GEN
T1 - Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel
T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012
AU - Nakaharai, Shu
AU - Iijima, Tomohiko
AU - Ogawa, Shinich
AU - Suzuki, Shingo
AU - Tsukagoshi, Kazuhito
AU - Sato, Shintaro
AU - Yokoyama, Naoki
PY - 2012
Y1 - 2012
N2 - We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 3 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
AB - We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 3 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
UR - http://www.scopus.com/inward/record.url?scp=84876121650&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876121650&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2012.6478976
DO - 10.1109/IEDM.2012.6478976
M3 - Conference contribution
AN - SCOPUS:84876121650
SN - 9781467348706
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 4.2.1-4.2.4
BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012
Y2 - 10 December 2012 through 13 December 2012
ER -