Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

Shu Nakaharai; Tomohiko Iijima; Shinich Ogawa; Shingo Suzuki; Kazuhito Tsukagoshi; Shintaro Sato; Naoki Yokoyama

doi:10.1109/IEDM.2012.6478976

Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

Shu Nakaharai, Tomohiko Iijima, Shinich Ogawa, Shingo Suzuki, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 ³ at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	4.2.1-4.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6478976
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 2012 Dec 10 → 2012 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/12/10 → 12/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6478976

Cite this

Nakaharai, S., Iijima, T., Ogawa, S., Suzuki, S., Tsukagoshi, K., Sato, S., & Yokoyama, N. (2012). Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 4.2.1-4.2.4). [6478976] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478976

Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel : Toward reconfigurable CMOS applications. / Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinich; Suzuki, Shingo; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki.

2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 4.2.1-4.2.4 6478976 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakaharai, S, Iijima, T, Ogawa, S, Suzuki, S, Tsukagoshi, K, Sato, S & Yokoyama, N 2012, Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478976, Technical Digest - International Electron Devices Meeting, IEDM, pp. 4.2.1-4.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/12/10. https://doi.org/10.1109/IEDM.2012.6478976

Nakaharai S, Iijima T, Ogawa S, Suzuki S, Tsukagoshi K, Sato S et al. Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications. In 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 4.2.1-4.2.4. 6478976. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478976

Nakaharai, Shu ; Iijima, Tomohiko ; Ogawa, Shinich ; Suzuki, Shingo ; Tsukagoshi, Kazuhito ; Sato, Shintaro ; Yokoyama, Naoki. / Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel : Toward reconfigurable CMOS applications. 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. pp. 4.2.1-4.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{63ddcaf0401e46e39f0870427461ac4c,

title = "Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications",

abstract = "We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 3 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.",

author = "Shu Nakaharai and Tomohiko Iijima and Shinich Ogawa and Shingo Suzuki and Kazuhito Tsukagoshi and Shintaro Sato and Naoki Yokoyama",

year = "2012",

doi = "10.1109/IEDM.2012.6478976",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "4.2.1--4.2.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

TY - GEN

T1 - Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

AU - Nakaharai, Shu

AU - Iijima, Tomohiko

AU - Ogawa, Shinich

AU - Suzuki, Shingo

AU - Tsukagoshi, Kazuhito

AU - Sato, Shintaro

AU - Yokoyama, Naoki

PY - 2012

Y1 - 2012

N2 - We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 3 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.

AB - We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 10 3 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.

UR - http://www.scopus.com/inward/record.url?scp=84876121650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876121650&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6478976

DO - 10.1109/IEDM.2012.6478976

M3 - Conference contribution

AN - SCOPUS:84876121650

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 4.2.1-4.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

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