Electrostatically reversible polarity of dual-gated graphene transistors

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We developed dual-gated graphene transistors in which the transistor polarity (n-type or p-type) is electrostatically reversible by the gate bias of one of the top gates. In this device, a channel is defined as the region between a pair of top gates, where graphene is irradiated by an accelerated helium ion beam to form a defect-induced transport gap. This device features not only a large current ON-OFF ratio of four orders of magnitude but also unipolarity of transistors, which would otherwise be ambipolar. We also show how these polarity-reversible transistors can be used in logic circuits.

Original languageEnglish
Article number6777549
Pages (from-to)1039-1043
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume13
Issue number6
DOIs
Publication statusPublished - 2014 Nov 1
Externally publishedYes

Keywords

  • Nanoelectronics
  • thin-film transistors

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electrostatically reversible polarity of dual-gated graphene transistors'. Together they form a unique fingerprint.

  • Cite this

    Nakaharai, S., Iijima, T., Ogawa, S., Li, S. L., Tsukagoshi, K., Sato, S., & Yokoyama, N. (2014). Electrostatically reversible polarity of dual-gated graphene transistors. IEEE Transactions on Nanotechnology, 13(6), 1039-1043. [6777549]. https://doi.org/10.1109/TNANO.2014.2313134