Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

Shu Nakaharai; Mahito Yamamoto; Keiji Ueno; Yen Fu Lin; Song Lin Li; Kazuhito Tsukagoshi

doi:10.1021/acsnano.5b00736

Electrostatically Reversible Polarity of Ambipolar α-MoTe₂ Transistors

Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen Fu Lin, Song Lin Li, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe₂) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Original language	English
Pages (from-to)	5976-5983
Number of pages	8
Journal	ACS Nano
Volume	9
Issue number	6
DOIs	https://doi.org/10.1021/acsnano.5b00736
Publication status	Published - 2015 Jun 23
Externally published	Yes

Keywords

ambipolar
field-effect transistor
molybdenum ditelluride
polarity control
transition metal dichalcogenide

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/acsnano.5b00736

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Cite this

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abstract = "A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.",

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AU - Nakaharai, Shu

AU - Yamamoto, Mahito

AU - Ueno, Keiji

AU - Lin, Yen Fu

AU - Li, Song Lin

AU - Tsukagoshi, Kazuhito

PY - 2015/6/23

Y1 - 2015/6/23

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AB - A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

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KW - field-effect transistor

KW - molybdenum ditelluride

KW - polarity control

KW - transition metal dichalcogenide

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