Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen Fu Lin, Song Lin Li, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)


A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Original languageEnglish
Pages (from-to)5976-5983
Number of pages8
JournalACS Nano
Issue number6
Publication statusPublished - 2015 Jun 23
Externally publishedYes


  • ambipolar
  • field-effect transistor
  • molybdenum ditelluride
  • polarity control
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors'. Together they form a unique fingerprint.

Cite this