Abstract
A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.
Original language | English |
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Pages (from-to) | 5976-5983 |
Number of pages | 8 |
Journal | ACS Nano |
Volume | 9 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2015 Jun 23 |
Externally published | Yes |
Keywords
- ambipolar
- field-effect transistor
- molybdenum ditelluride
- polarity control
- transition metal dichalcogenide
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)