TY - JOUR
T1 - Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition
AU - Van Toan, Nguyen
AU - Zhao, Dong
AU - Inomata, Naoki
AU - Toda, Masaya
AU - Song, Yunheub
AU - Ono, Takahito
N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University. This work was supported in part by Council for Science, Technology and Innovation(CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP) and also supported in part by JSPS KAKENHI for Young Scientists B (Grant number: 17K14095).
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/7/24
Y1 - 2019/7/24
N2 - This paper presents the design, fabrication, and evaluation of electrostatically driven nanoelectromechanical (NEM) switches and logical gates, including NAND and NOR gates. The conformal deposition of tungsten (W) on high aspect ratio structures is investigated by selective W chemical vapor deposition (CVD) as an electrical contact material. The switching characteristics of the NEM switches, as well as their pull-in voltages, are evaluated. Logical gates, including NAND and NOR gates, are formed by the four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of an electron beam lithography, a deep reactive ion etching, and a selective W CVD. The truth table operations for the NAND and NOR gates are examined and demonstrated in this paper.
AB - This paper presents the design, fabrication, and evaluation of electrostatically driven nanoelectromechanical (NEM) switches and logical gates, including NAND and NOR gates. The conformal deposition of tungsten (W) on high aspect ratio structures is investigated by selective W chemical vapor deposition (CVD) as an electrical contact material. The switching characteristics of the NEM switches, as well as their pull-in voltages, are evaluated. Logical gates, including NAND and NOR gates, are formed by the four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of an electron beam lithography, a deep reactive ion etching, and a selective W CVD. The truth table operations for the NAND and NOR gates are examined and demonstrated in this paper.
KW - NAND
KW - NOR
KW - logical gates
KW - nanoelectromechanical switches
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U2 - 10.1002/pssa.201800797
DO - 10.1002/pssa.201800797
M3 - Article
AN - SCOPUS:85065288635
VL - 216
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 14
M1 - 1800797
ER -