Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

Nguyen Van Toan; Dong Zhao; Naoki Inomata; Masaya Toda; Yunheub Song; Takahito Ono

doi:10.1002/pssa.201800797

Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

Nguyen Van Toan, Dong Zhao, Naoki Inomata, Masaya Toda, Yunheub Song, Takahito Ono

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper presents the design, fabrication, and evaluation of electrostatically driven nanoelectromechanical (NEM) switches and logical gates, including NAND and NOR gates. The conformal deposition of tungsten (W) on high aspect ratio structures is investigated by selective W chemical vapor deposition (CVD) as an electrical contact material. The switching characteristics of the NEM switches, as well as their pull-in voltages, are evaluated. Logical gates, including NAND and NOR gates, are formed by the four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of an electron beam lithography, a deep reactive ion etching, and a selective W CVD. The truth table operations for the NAND and NOR gates are examined and demonstrated in this paper.

Original language	English
Article number	1800797
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	14
DOIs	https://doi.org/10.1002/pssa.201800797
Publication status	Published - 2019 Jul 24

Keywords

NAND
NOR
logical gates
nanoelectromechanical switches

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition. / Van Toan, Nguyen; Zhao, Dong; Inomata, Naoki ; Toda, Masaya; Song, Yunheub; Ono, Takahito.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 216, No. 14, 1800797, 24.07.2019.

Research output: Contribution to journal › Article › peer-review

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