Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

Original languageEnglish
Article number142104
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009 Apr 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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