Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

K. Takashina; K. Nishiguchi; Y. Ono; A. Fujiwara; T. Fujisawa; Y. Hirayama; K. Muraki

doi:10.1063/1.3112602

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki

SCI - Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

Original language	English
Article number	142104
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3112602
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3112602

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abstract = "We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.",

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AU - Takashina, K.

AU - Nishiguchi, K.

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AU - Fujiwara, A.

AU - Fujisawa, T.

AU - Hirayama, Y.

AU - Muraki, K.

PY - 2009

Y1 - 2009

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AB - We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

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Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Abstract

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