Abstract
We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.
Original language | English |
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Article number | 142104 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)