Electronic transport through electron-doped metal phthalocyanine materials

Monica Felicia Craciun, Sven Rogge, Marc Jan L. Den Boer, Serena Margadonna, Kosmas Prassides, Yoshihiro Iwasa, Alberto F. Morpurgo

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The electronic and structural properties if electron-doped metal phthalocyanine compounds through the intercalation of potassium atoms were investigated. It was observed that electron doping gives access to broader electron density to these compounds, when compared to known hole-doped materials based on the same molecules. The CuPc films exhibited very large apparent gap of several volts because of high resistance of undoped films. The results show that the combination of the large density range accessible by electron doping and various properties of metal phthalate gives these compounds unique properties helpful for the study of electronic phenomena.

Original languageEnglish
Pages (from-to)320-324
Number of pages5
JournalAdvanced Materials
Volume18
Issue number3
DOIs
Publication statusPublished - 2006 Feb 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Craciun, M. F., Rogge, S., Den Boer, M. J. L., Margadonna, S., Prassides, K., Iwasa, Y., & Morpurgo, A. F. (2006). Electronic transport through electron-doped metal phthalocyanine materials. Advanced Materials, 18(3), 320-324. https://doi.org/10.1002/adma.200501268