Electronic transport properties of hole-doped Sr1+xLa1-xCrO4+δ

Takahisa Omata, Takashi Kawano, Hiroyuki Ikawa, Tadashi Sasamoto, Hideo Hosono, Hiroshi Mizoguchi, Hiroshi Kawazoe

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1 Citation (Scopus)

Abstract

Polycrystalline bodies of Sr1+xLa1-xCrO4+δ (0≤x≤0.3) with a K2NiF4 structure were prepared and the temperature dependence of the electrical conductivity and Seebeck voltage at room temperature were measured. The temperature dependence of conductivity followed a functional form of exp [( - T0/T) α] (α=1/3 or 1/4 ), which was characteristic of two- or three-dimensional variable-range hopping (VRH) model. The hopping conductivity showed that the crystal was non-metallic because the electronic states at the Fermi energy were localized. Values of T0 in the three-dimensional VRH regime were in the range of 1-5 × 108 K. This was larger by two orders of magnitude than reported values in La2CuO4 which was insulating between room temperature and 2 K. Based on the VRH regime, the larger T0 values were considered to be caused by the smaller localization radius of impurity states. All the samples were demonstrated to have a positive Seebeck coefficient. Further, the coefficient decreased with increasing doping level. The composition dependence of the Seebeck coefficient was discussed in relation to the changes with compositions in T0 and the density of states in the vicinity of the Fermi energy.

Original languageEnglish
Pages (from-to)1112-1116
Number of pages5
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume103
Issue number1203
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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