Electronic transport properties of Cu/MnOx/SiO2/p-Si MOS devices

V. K. Dixit, K. Neishi, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An ultrathin barrier layer of MnOx was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO 2 dielectric. The electronic transport properties of Cu/MnO x/SiO2/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10-8-10 -7A/cm2 up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×103s at 550K. The capacitance-voltage curves of the MOS device having the MnOx layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×103s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×103 s. These results indicate that the ultrathin layer of MnOx is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO2 dielectric.

Original languageEnglish
Title of host publicationMaterials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009
Pages105-109
Number of pages5
Publication statusPublished - 2009 Dec 1
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 132009 Apr 17

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1156
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period09/4/1309/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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