Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

Y. F. Li, R. Hatakeyama, T. Kaneko, T. Izumida, T. Okada, T. Kato

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors' results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.

Original languageEnglish
Article number093110
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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