Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

M. Fukuhara; H. Yoshida; K. Koyama; A. Inoue; Y. Miura

doi:10.1063/1.3284207

Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

M. Fukuhara, H. Yoshida, K. Koyama, A. Inoue, Y. Miura

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The electronic transport behaviors of (Ni_0.36 Nb_0.24 Zr_0.40)_100-y H_y (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr₅ Nb₅ Ni ₃ clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.

Original language	English
Article number	033703
Journal	Journal of Applied Physics
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.3284207
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys",

abstract = "The electronic transport behaviors of (Ni0.36 Nb0.24 Zr0.40)100-y Hy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5 Nb5 Ni 3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.",

author = "M. Fukuhara and H. Yoshida and K. Koyama and A. Inoue and Y. Miura",

note = "Funding Information: This work was supported by a Grant-In-Aid for Science Research in the priority Area “Research and Development Project on Advanced Metallic Glasses, Inorganic Materials, and Joining Technology” from the Ministry of Education, Science, Sports, and Culture, Japan. ",

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doi = "10.1063/1.3284207",

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T1 - Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

AU - Fukuhara, M.

AU - Yoshida, H.

AU - Koyama, K.

AU - Inoue, A.

AU - Miura, Y.

N1 - Funding Information: This work was supported by a Grant-In-Aid for Science Research in the priority Area “Research and Development Project on Advanced Metallic Glasses, Inorganic Materials, and Joining Technology” from the Ministry of Education, Science, Sports, and Culture, Japan.

PY - 2010

Y1 - 2010

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AB - The electronic transport behaviors of (Ni0.36 Nb0.24 Zr0.40)100-y Hy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5 Nb5 Ni 3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.

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Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

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