Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

M. Fukuhara; H. Yoshida; K. Koyama; A. Inoue; Y. Miura

doi:10.1063/1.3284207

Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

M. Fukuhara, H. Yoshida, K. Koyama, A. Inoue, Y. Miura

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The electronic transport behaviors of (Ni_0.36 Nb_0.24 Zr_0.40)_100-y H_y (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr₅ Nb₅ Ni ₃ clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.

Original language	English
Article number	033703
Journal	Journal of Applied Physics
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.3284207
Publication status	Published - 2010 Feb 24

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3284207

Fingerprint Dive into the research topics of 'Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys'. Together they form a unique fingerprint.

Cite this

@article{6c5949a3761f428c83ac8c3512c06f2e,

title = "Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys",

abstract = "The electronic transport behaviors of (Ni0.36 Nb0.24 Zr0.40)100-y Hy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5 Nb5 Ni 3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.",

author = "M. Fukuhara and H. Yoshida and K. Koyama and A. Inoue and Y. Miura",

year = "2010",

month = feb,

day = "24",

doi = "10.1063/1.3284207",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Electronic transport behaviors of Ni-Nb-Zr-H glassy alloys

AU - Fukuhara, M.

AU - Yoshida, H.

AU - Koyama, K.

AU - Inoue, A.

AU - Miura, Y.

PY - 2010/2/24

Y1 - 2010/2/24

N2 - The electronic transport behaviors of (Ni0.36 Nb0.24 Zr0.40)100-y Hy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5 Nb5 Ni 3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.

AB - The electronic transport behaviors of (Ni0.36 Nb0.24 Zr0.40)100-y Hy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5 Nb5 Ni 3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.

UR - http://www.scopus.com/inward/record.url?scp=76949084679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949084679&partnerID=8YFLogxK

U2 - 10.1063/1.3284207

DO - 10.1063/1.3284207

M3 - Article

AN - SCOPUS:76949084679

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033703

ER -