Electronic structure of Yb4As3

Makoto Shirakawa, Hidekazu Aoki, Hayuyoshi Aoki, Akira Ochiai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two kinds of substituted systems, Yb4(As1-xSe x)3 and Yb4(As1-xSb x)3, were investigated to clarify the electronic structure of Yb4As3. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb3+ ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb3+ ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb2+ ions on the one-dimensional magnetic chains in Yb4As3. This scenario could explain many physical properties of the substituted and non-doped Yb4As3.

Original languageEnglish
Pages (from-to)2893-2901
Number of pages9
Journaljournal of the physical society of japan
Volume72
Issue number11
DOIs
Publication statusPublished - 2003 Nov

Keywords

  • Electronic structure
  • Transport properties
  • Yb(AsSb)
  • Yb(AsSe )
  • YbAs

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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