Electronic structure of Yb4As3

Makoto Shirakawa; Hidekazu Aoki; Hayuyoshi Aoki; Akira Ochiai

doi:10.1143/JPSJ.72.2893

Electronic structure of Yb₄As₃

Makoto Shirakawa, Hidekazu Aoki, Hayuyoshi Aoki, Akira Ochiai

SCI - Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Two kinds of substituted systems, Yb₄(As_1-xSe _x)₃ and Yb₄(As_1-xSb _x)₃, were investigated to clarify the electronic structure of Yb₄As₃. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb³⁺ ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb³⁺ ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb²⁺ ions on the one-dimensional magnetic chains in Yb₄As₃. This scenario could explain many physical properties of the substituted and non-doped Yb₄As₃.

Original language	English
Pages (from-to)	2893-2901
Number of pages	9
Journal	journal of the physical society of japan
Volume	72
Issue number	11
DOIs	https://doi.org/10.1143/JPSJ.72.2893
Publication status	Published - 2003 Nov

Keywords

Electronic structure
Transport properties
Yb(AsSb)
Yb(AsSe )
YbAs

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1143/JPSJ.72.2893

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title = "Electronic structure of Yb4As3",

abstract = "Two kinds of substituted systems, Yb4(As1-xSe x)3 and Yb4(As1-xSb x)3, were investigated to clarify the electronic structure of Yb4As3. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb3+ ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb3+ ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb2+ ions on the one-dimensional magnetic chains in Yb4As3. This scenario could explain many physical properties of the substituted and non-doped Yb4As3.",

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author = "Makoto Shirakawa and Hidekazu Aoki and Hayuyoshi Aoki and Akira Ochiai",

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T1 - Electronic structure of Yb4As3

AU - Shirakawa, Makoto

AU - Aoki, Hidekazu

AU - Aoki, Hayuyoshi

AU - Ochiai, Akira

PY - 2003/11

Y1 - 2003/11

N2 - Two kinds of substituted systems, Yb4(As1-xSe x)3 and Yb4(As1-xSb x)3, were investigated to clarify the electronic structure of Yb4As3. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb3+ ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb3+ ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb2+ ions on the one-dimensional magnetic chains in Yb4As3. This scenario could explain many physical properties of the substituted and non-doped Yb4As3.

AB - Two kinds of substituted systems, Yb4(As1-xSe x)3 and Yb4(As1-xSb x)3, were investigated to clarify the electronic structure of Yb4As3. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb3+ ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb3+ ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb2+ ions on the one-dimensional magnetic chains in Yb4As3. This scenario could explain many physical properties of the substituted and non-doped Yb4As3.

KW - Electronic structure

KW - Transport properties

KW - Yb(AsSb)

KW - Yb(AsSe )

KW - YbAs

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