Electronic structure of V2O3 thin film prepared by RF magnetron sputtering using oxygen radical and V-metal

Yuichi Shimazu, Teppei Okumura, Atsushi Shimada, Kenji Tanabe, Kazuyasu Tokiwa, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have prepared V2O3 thin films on Al 2O3 (0001) substrate by RF magnetron sputtering using oxygen radical and V-metal target, and studied their electronic structures by X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The as-deposited V2O3 thin films deposited at 600 °C exhibits high crystallization by oxygen radical irradiation during deposition. The electrical resistivity decreases with increasing deposition temperature, and this result is due to decreasing electron scattering. The crystal field splitting (10Dq) of the V2O3 thin film estimated from the fitting of the V 2p XAS spectrum is larger than that of the bulk crystal. In the XPS spectrum of the valence band region, the density of state (DOS) of the a1g orbital in the V 3d state increases at around the Fermi level. These results contribute to the lattice distortion between the thin film and the substrate.

Original languageEnglish
Article number06JG05
JournalJapanese journal of applied physics
Volume53
Issue number6 SPEC. ISSUE
DOIs
Publication statusPublished - 2014 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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