Electronic structure of the Si(100) surface A defects analyzed by scanning tunneling spectroscopy at 80 K

Yasuyuki Sainoo, Tomohiko Kimura, Ryuji Morita, Mikio Yamashita, Kenji Hata, Hidemi Shigekawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The A defects on the Si(100) surface can be classified as A1, A2, and A3 at low temperatures. We carried out scanning tunneling microscopy observations and scanning tunneling spectroscopy measurements at approximately 80 K to study their electronic structures. We found that the A1 defect is semiconductive similar to the A defect at room temperature (RT), while the A2 and A3 defects exhibited states in the surface band gap at 80 K. On comparing these results with the theoretical models, we concluded that the A1 defect correspond to the Rebonded vacancy model. The broken vacancy model and the twisted vacancy models are the possible candidates for the A2 and A3 defects, respectively.

Original languageEnglish
Pages (from-to)3833-3836
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number6 B
Publication statusPublished - 1999 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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