Electronic structure of the iron chalcogenide KFeAgTe2 revealed by angle-resolved photoemission spectroscopy

R. Ang, K. Nakayama, W. G. Yin, T. Sato, Hechang Lei, C. Petrovic, T. Takahashi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have performed angle-resolved photoemission spectroscopy (ARPES) of KFeAgTe2, and revealed the absence of band crossing at the Fermi level (EF) indicative of the unconventional insulating nature of this material. Comparison of the ARPES-derived band dispersions with the first-principles calculations based on local density approximation and the inclusion of electron correlation U demonstrated that the ground state of KFeAgTe2 is not a simple band insulator. And also, our fitting result on the ARPES experimental density of states near EF plausibly excludes the possibility of Anderson insulator. We suggest that KFeAgTe 2 is most likely a Mott insulator or a Hund insulator, providing a deep insight into the insulating ground state.

Original languageEnglish
Article number155102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number15
DOIs
Publication statusPublished - 2013 Oct 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronic structure of the iron chalcogenide KFeAgTe<sub>2</sub> revealed by angle-resolved photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this