Electronic structure of the Ga1 - XCrxN studied by high-energy photoemission spectroscopy

J. J. Kim, H. Makino, T. Yao, Y. Takata, K. Kobayashi, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Valence band spectra of Ga1 - xCrxN have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms.

Original languageEnglish
Pages (from-to)561-564
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 2005 Jun


  • Cr-doped GaN
  • Ferromagnetism
  • High-energy photoemission spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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