Electronic structure of the Ga1 - XCrxN studied by high-energy photoemission spectroscopy

J. J. Kim; H. Makino; T. Yao; Y. Takata; K. Kobayashi; T. Yamamoto; T. Hanada; M. W. Cho; E. Ikenaga; M. Yabashi; D. Miwa; Y. Nishino; K. Tamasaku; T. Ishikawa; S. Shin

doi:10.1016/j.elspec.2005.01.137

Electronic structure of the Ga_{1 - X}Cr_xN studied by high-energy photoemission spectroscopy

J. J. Kim, H. Makino, T. Yao, Y. Takata, K. Kobayashi, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin

Materials Design Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Valence band spectra of Ga_{1 - x}Cr_xN have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms.

Original language	English
Pages (from-to)	561-564
Number of pages	4
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	144-147
DOIs	https://doi.org/10.1016/j.elspec.2005.01.137
Publication status	Published - 2005 Jun

Keywords

Cr-doped GaN
Ferromagnetism
High-energy photoemission spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.elspec.2005.01.137

Cite this

Kim, J. J., Makino, H., Yao, T., Takata, Y., Kobayashi, K., Yamamoto, T., Hanada, T., Cho, M. W., Ikenaga, E., Yabashi, M., Miwa, D., Nishino, Y., Tamasaku, K., Ishikawa, T., & Shin, S. (2005). Electronic structure of the Ga_{1 - X}Cr_xN studied by high-energy photoemission spectroscopy. Journal of Electron Spectroscopy and Related Phenomena, 144-147, 561-564. https://doi.org/10.1016/j.elspec.2005.01.137

Electronic structure of the Ga_{1 - X}Cr_xN studied by high-energy photoemission spectroscopy. / Kim, J. J.; Makino, H.; Yao, T.; Takata, Y.; Kobayashi, K.; Yamamoto, T.; Hanada, T.; Cho, M. W.; Ikenaga, E.; Yabashi, M.; Miwa, D.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Shin, S.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 144-147, 06.2005, p. 561-564.

Research output: Contribution to journal › Article › peer-review

Kim, JJ, Makino, H, Yao, T, Takata, Y, Kobayashi, K, Yamamoto, T, Hanada, T, Cho, MW, Ikenaga, E, Yabashi, M, Miwa, D, Nishino, Y, Tamasaku, K, Ishikawa, T & Shin, S 2005, 'Electronic structure of the Ga_{1 - X}Cr_xN studied by high-energy photoemission spectroscopy', Journal of Electron Spectroscopy and Related Phenomena, vol. 144-147, pp. 561-564. https://doi.org/10.1016/j.elspec.2005.01.137

Kim, J. J. ; Makino, H. ; Yao, T. ; Takata, Y. ; Kobayashi, K. ; Yamamoto, T. ; Hanada, T. ; Cho, M. W. ; Ikenaga, E. ; Yabashi, M. ; Miwa, D. ; Nishino, Y. ; Tamasaku, K. ; Ishikawa, T. ; Shin, S. / Electronic structure of the Ga_{1 - X}Cr_xN studied by high-energy photoemission spectroscopy. In: Journal of Electron Spectroscopy and Related Phenomena. 2005 ; Vol. 144-147. pp. 561-564.

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title = "Electronic structure of the Ga1 - XCrxN studied by high-energy photoemission spectroscopy",

abstract = "Valence band spectra of Ga1 - xCrxN have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms.",

keywords = "Cr-doped GaN, Ferromagnetism, High-energy photoemission spectroscopy",

author = "Kim, {J. J.} and H. Makino and T. Yao and Y. Takata and K. Kobayashi and T. Yamamoto and T. Hanada and Cho, {M. W.} and E. Ikenaga and M. Yabashi and D. Miwa and Y. Nishino and K. Tamasaku and T. Ishikawa and S. Shin",

note = "Funding Information: The experiments were performed at the SPring-8 with the approval of the JASRI (proposal no. 2004A0565-Nsa-np-Na). We would like to thank to Dr. M. Awaji and Dr. A. Takeuchi for their help in the alignment of X-ray optics at BL47XU of SPring-8. J.J. Kim would like to thank International Communications Foundation (ICF) for its financial support, “Fellowship for Researchers and Graduate Students from abroad”.",

year = "2005",

month = jun,

doi = "10.1016/j.elspec.2005.01.137",

language = "English",

volume = "144-147",

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journal = "Journal of Electron Spectroscopy and Related Phenomena",

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T1 - Electronic structure of the Ga1 - XCrxN studied by high-energy photoemission spectroscopy

AU - Kim, J. J.

AU - Makino, H.

AU - Yao, T.

AU - Takata, Y.

AU - Kobayashi, K.

AU - Yamamoto, T.

AU - Hanada, T.

AU - Cho, M. W.

AU - Ikenaga, E.

AU - Yabashi, M.

AU - Miwa, D.

AU - Nishino, Y.

AU - Tamasaku, K.

AU - Ishikawa, T.

AU - Shin, S.

N1 - Funding Information: The experiments were performed at the SPring-8 with the approval of the JASRI (proposal no. 2004A0565-Nsa-np-Na). We would like to thank to Dr. M. Awaji and Dr. A. Takeuchi for their help in the alignment of X-ray optics at BL47XU of SPring-8. J.J. Kim would like to thank International Communications Foundation (ICF) for its financial support, “Fellowship for Researchers and Graduate Students from abroad”.

PY - 2005/6

Y1 - 2005/6

N2 - Valence band spectra of Ga1 - xCrxN have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms.

AB - Valence band spectra of Ga1 - xCrxN have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms.

KW - Cr-doped GaN

KW - Ferromagnetism

KW - High-energy photoemission spectroscopy

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