Electronic structure of Si and Ge gold-doped clathrates

Rüdiger F.W. Herrmann, Katsumi Tanigaki, Tetsuji Kawaguchi, Sadanori Kuroshima, Otto Zhou

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)

Abstract

The electronic properties of single phase type-I clathrate compounds, Ba8Au6(SiorGe)40 and Ba8Ge46-x have been investigated. The crystal structure, electrical resistivities, magnetic susceptibilities, the density of states at the Fermi level, and the band gap (where applicable) were determined. Ba8Au6Si40 and Ba8Au6Ge40 show a metallic behavior whereas Ba8Ge46-x is semiconducting. On a basis of this work, a first evidence is presented of the existence of type-I mixed-clathrates containing both silicon and germanium.

Original languageEnglish
Pages (from-to)13245-13248
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number19
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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