Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ

T. Higuchi, T. Tsukamoto, H. Matsumoto, T. Shimura, K. Yashiro, T. Kawada, J. Mizusaki, S. Shin, T. Hattori

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.

Original languageEnglish
Pages (from-to)2967-2970
Number of pages4
JournalSolid State Ionics
Volume176
Issue number39-40
DOIs
Publication statusPublished - 2005 Dec 1

Keywords

  • BaCeYO
  • Electronic structure
  • Holes
  • Photoemission spectroscopy (PES)
  • Protonic conductor
  • X-ray absorption spectroscopy (XAS)

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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    Higuchi, T., Tsukamoto, T., Matsumoto, H., Shimura, T., Yashiro, K., Kawada, T., Mizusaki, J., Shin, S., & Hattori, T. (2005). Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ. Solid State Ionics, 176(39-40), 2967-2970. https://doi.org/10.1016/j.ssi.2005.09.032