Electronic Structure of Nonstoichiometric Boron Nitride Films

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2 Citations (Scopus)

Abstract

The density of states of π bands in boron nitride films is evaluated by assuming the films to be a substitutional disordered system in a two-dimensional hexagonal network. The Hamiltonian is described with a simple tight binding model and the calculations are carried out by using an extended version of the coherent potential approximation including atomic correlation. For completely disordered systems, no forbidden gap is found even in B/N=1, contrary to the experimental findings. When we start from periodic boron nitride (h-BN), on the other hand, where the energy gap is approximately 5 eV, the change in the composition ratio of B/N>1 turns out to narrow the gap due to the occurrence of new states. We suggest that the emergence of such a subband shows the crucial role of the decrease in the optical band gap of boron-rich films.

Original languageEnglish
Pages (from-to)19-24
Number of pages6
JournalJapanese journal of applied physics
Volume29
Issue number1 R
DOIs
Publication statusPublished - 1990 Jan
Externally publishedYes

Keywords

  • Boron nitride films
  • Coherent potential approximation
  • Electronic structure
  • Tight binding approximation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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