Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy

Jungjin J. Kim, H. Makino, K. Yamazaki, A. Ino, H. Namatame, M. Taniguchi, T. Hanada, M. W. Cho, T. Yao

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5 Citations (Scopus)

Abstract

We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.

Original languageEnglish
Pages (from-to)603-606
Number of pages4
JournalCurrent Applied Physics
Volume4
Issue number6
DOIs
Publication statusPublished - 2004 Nov 1
Externally publishedYes

Keywords

  • Ferromagnetic DMS
  • GaCrN
  • Photoemission spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Kim, J. J., Makino, H., Yamazaki, K., Ino, A., Namatame, H., Taniguchi, M., Hanada, T., Cho, M. W., & Yao, T. (2004). Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy. Current Applied Physics, 4(6), 603-606. https://doi.org/10.1016/j.cap.2004.01.028