Abstract
We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.
| Original language | English |
|---|---|
| Pages (from-to) | 603-606 |
| Number of pages | 4 |
| Journal | Current Applied Physics |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2004 Nov 1 |
| Externally published | Yes |
Keywords
- Ferromagnetic DMS
- GaCrN
- Photoemission spectroscopy
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
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Kim, J. J., Makino, H., Yamazaki, K., Ino, A., Namatame, H., Taniguchi, M., Hanada, T., Cho, M. W., & Yao, T. (2004). Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy. Current Applied Physics, 4(6), 603-606. https://doi.org/10.1016/j.cap.2004.01.028