Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy

Jungjin J. Kim; H. Makino; K. Yamazaki; A. Ino; H. Namatame; M. Taniguchi; T. Hanada; M. W. Cho; T. Yao

doi:10.1016/j.cap.2004.01.028

Electronic structure of Ga_1-xCr_xN investigated by photoemission spectroscopy

Jungjin J. Kim, H. Makino, K. Yamazaki, A. Ino, H. Namatame, M. Taniguchi, T. Hanada, M. W. Cho, T. Yao

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga_0.937Cr_0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.

Original language	English
Pages (from-to)	603-606
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2004.01.028
Publication status	Published - 2004 Nov 1
Externally published	Yes

Keywords

Ferromagnetic DMS
GaCrN
Photoemission spectroscopy

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2004.01.028

Cite this

@article{f20c18ca2c4a410288f58e845db96231,

title = "Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy",

abstract = "We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.",

keywords = "Ferromagnetic DMS, GaCrN, Photoemission spectroscopy",

author = "Kim, {Jungjin J.} and H. Makino and K. Yamazaki and A. Ino and H. Namatame and M. Taniguchi and T. Hanada and Cho, {M. W.} and T. Yao",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.cap.2004.01.028",

language = "English",

volume = "4",

pages = "603--606",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy

AU - Kim, Jungjin J.

AU - Makino, H.

AU - Yamazaki, K.

AU - Ino, A.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.

AB - We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.

KW - Ferromagnetic DMS

KW - GaCrN

KW - Photoemission spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=5144225812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5144225812&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2004.01.028

DO - 10.1016/j.cap.2004.01.028

M3 - Article

AN - SCOPUS:5144225812

VL - 4

SP - 603

EP - 606

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 6

ER -