TY - JOUR
T1 - Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy
AU - Kim, Jungjin J.
AU - Makino, H.
AU - Yamazaki, K.
AU - Ino, A.
AU - Namatame, H.
AU - Taniguchi, M.
AU - Hanada, T.
AU - Cho, M. W.
AU - Yao, T.
PY - 2004/11/1
Y1 - 2004/11/1
N2 - We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.
AB - We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.
KW - Ferromagnetic DMS
KW - GaCrN
KW - Photoemission spectroscopy
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U2 - 10.1016/j.cap.2004.01.028
DO - 10.1016/j.cap.2004.01.028
M3 - Article
AN - SCOPUS:5144225812
VL - 4
SP - 603
EP - 606
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 6
ER -