Abstract
Density-functional calculations of the electronic structure of GaAs-Ga1-xAlxAs quantum wells in the presence of free carriers are reported. We investigate the effect of p-type modulation doping, electric fields, and electron-hole plasmas on the band gap. The results are compared with published photoluminescence experiments. The electron-hole drop is found to be unstable with respect to dissociation into excitons.
Original language | English |
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Pages (from-to) | 1300-1303 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 34 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1986 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics