Density-functional calculations of the electronic structure of GaAs-Ga1-xAlxAs quantum wells in the presence of free carriers are reported. We investigate the effect of p-type modulation doping, electric fields, and electron-hole plasmas on the band gap. The results are compared with published photoluminescence experiments. The electron-hole drop is found to be unstable with respect to dissociation into excitons.
ASJC Scopus subject areas
- Condensed Matter Physics