TY - JOUR
T1 - Electronic structure of c-axis controlled Fe2O3 thin film probed by soft-X-ray spectroscopy
AU - Kawamura, Kinya
AU - Suzuki, Naoya
AU - Tsuchiya, Takashi
AU - Yamaguchi, Shohei
AU - Ochi, Masanori
AU - Suetsugu, Takaaki
AU - Minohara, Makoto
AU - Kobayashi, Masaki
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/6
Y1 - 2016/6
N2 - We have prepared c-axis controlled Fe2O3 thin films on Al2O3 substrates by RF magnetron sputtering and studied their electronic structure by soft-X-ray spectroscopy. The lattice constant of c-axis increases with increasing film thickness due to the relaxation of lattice mismatch between Fe2O3 and Al2O3 and formation of oxygen vacancies. The electrical conductivity is higher in thicker thin film. The valence band consists of t2gand eg-subbband of Fe 3d state hybridized with O 2p state. The band gaps of >25 and >95nm thicknesses of Fe2O3 thin film are >1.8 and 1.4 eV, respectively, which correspond to the activation energy of electron conductivity. The above results indicate that the band gap and the conductivity of Fe2O3 thin film directly affect the change of the lattice constant of c-axis and formation of oxygen vacancies.
AB - We have prepared c-axis controlled Fe2O3 thin films on Al2O3 substrates by RF magnetron sputtering and studied their electronic structure by soft-X-ray spectroscopy. The lattice constant of c-axis increases with increasing film thickness due to the relaxation of lattice mismatch between Fe2O3 and Al2O3 and formation of oxygen vacancies. The electrical conductivity is higher in thicker thin film. The valence band consists of t2gand eg-subbband of Fe 3d state hybridized with O 2p state. The band gaps of >25 and >95nm thicknesses of Fe2O3 thin film are >1.8 and 1.4 eV, respectively, which correspond to the activation energy of electron conductivity. The above results indicate that the band gap and the conductivity of Fe2O3 thin film directly affect the change of the lattice constant of c-axis and formation of oxygen vacancies.
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U2 - 10.7567/JJAP.55.06GJ04
DO - 10.7567/JJAP.55.06GJ04
M3 - Article
AN - SCOPUS:84974621977
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 06GJ04
ER -