Electronic structure of b-axis oriented VO2 thin film with mixed-valence states probed by soft-X-ray spectroscopy

Takaaki Suetsugu, Yuichi Shimazu, Takashi Tsuchiya, Masaki Kobayashi, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The electronic structure of b-axis oriented VO2 thin films in monoclinic phase with various thicknesses has been studied by soft-X-ray spectroscopy. The VO2 thin films show the mixed-valence V3+/V4+ state, which is created by oxygen vacancies. The V3+ state and oxygen vacancies increase with increasing film thickness. The thinnest film of 56 nm exhibits a metal-insulator transition (MIT) at ∼340 K, although thicker films of 126 and 155 nm do not exhibit MIT. The valence band structure around the Fermi level consists of V 3d e(Formula presented.), a1g, and e(Formula presented.) bands. The bandwidths and spectral weights of the a1g and e(Formula presented.) bands are smaller in the thinnest film, which corresponds to the insulating phase at 300 K. The above results indicate that the mixed-valence states with oxygen vacancies are closely related to the MIT in the monoclinic phase of VO2 thin films.

Original languageEnglish
Article number064715
Journaljournal of the physical society of japan
Issue number6
Publication statusPublished - 2015 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electronic structure of b-axis oriented VO<sub>2</sub> thin film with mixed-valence states probed by soft-X-ray spectroscopy'. Together they form a unique fingerprint.

Cite this