Electronic structure of a monoatomic Cu2 Si layer on a Si(111) substrate

M. Cameau, R. Yukawa, C. H. Chen, A. Huang, S. Ito, R. Ishibiki, K. Horiba, Y. Obata, T. Kondo, H. Kumigashira, H. T. Jeng, M. D'Angelo, I. Matsuda

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Fermi surfaces and band dispersion curves of a Cu2Si layer on Si(111), quasi-"5×5" were mapped by angle-resolved photoemission spectroscopy using synchrotron radiation. Two metallic bands were observed within the Si bulk band gap, which are likely assigned to the electronic bands of the Cu2Si layer. Additional bands were found in the Si bulk band gap that originate from the interactions between the substrate state and the Cu2Si states that have the pz character. The present research aims at investigating the changes in the electronic structure of an atomic layer when prepared on a substrate.

Original languageEnglish
Article number044004
JournalPhysical Review Materials
Volume3
Issue number4
DOIs
Publication statusPublished - 2019 Apr 24
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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