Electronic structure of a 3x3-ordered silicon layer on Al(111)

Yusuke Sato, Yuki Fukaya, Mathis Cameau, Asish K. Kundu, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Chin Hsuan Chen, Angus Huang, Horng Tay Jeng, Taisuke Ozaki, Hiroshi Kumigashira, Masahito Niibe, Iwao Matsuda

Research output: Contribution to journalArticlepeer-review

Abstract

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from liniarly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2020 May 11

ASJC Scopus subject areas

  • General

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