Electronic structure of a (3×3)-ordered silicon layer on Al(111)

Yusuke Sato, Yuki Fukaya, Mathis Cameau, Asish K. Kundu, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Chin Hsuan Chen, Angus Huang, Horng Tay Jeng, Taisuke Ozaki, Hiroshi Kumigashira, Masahito Niibe, Iwao Matsuda

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Abstract

The electronic structure of the (3×3)-ordered phase of a silicon (Si) layer on Al(111) has been studied by angle-resolved photoemission spectroscopy using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from a linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac-cone-like dispersion curve. The Si layer on Al(111) can be a model system of Xenes to realize the massless electronic system through the overlayer-substrate interaction.

Original languageEnglish
Article number064005
JournalPhysical Review Materials
Volume4
Issue number6
DOIs
Publication statusPublished - 2020 Jun

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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    Sato, Y., Fukaya, Y., Cameau, M., Kundu, A. K., Shiga, D., Yukawa, R., Horiba, K., Chen, C. H., Huang, A., Jeng, H. T., Ozaki, T., Kumigashira, H., Niibe, M., & Matsuda, I. (2020). Electronic structure of a (3×3)-ordered silicon layer on Al(111). Physical Review Materials, 4(6), [064005]. https://doi.org/10.1103/PhysRevMaterials.4.064005