Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)

Takushi Iimori, Anton Visikovskiy, Hitoshi Imamura, Toshio Miyamachi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Kazuhiko Mase, Kan Nakatsuji, Satoru Tanaka, Fumio Komori

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic structure of 3°-twisted bilayer graphene (TBG) is studied by angle-resolved photoelectron spectroscopy (ARPES). Sub-mm-sized TBG prepared by direct bonding in a high vacuum enabled us to use conventional ARPES band mapping with synchrotron light. The results indicate that strong interlayer coupling makes a moiré potential for the Dirac electrons and significantly modifies the graphene bands around the K̄ points such as the band splitting and electron velocity reduction. The observed electronic structure is consistently reproduced by tight-binding calculations combined with a band unfolding method.

Original languageEnglish
Article numberL051001
JournalPhysical Review Materials
Volume5
Issue number5
DOIs
Publication statusPublished - 2021 May

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)'. Together they form a unique fingerprint.

Cite this