Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements

Tomoaki Ishii, Tadashi Kawazoe, Yusuke Hashimoto, Hiroshi Terada, Iriya Muneta, Motoichi Ohtsu, Masaaki Tanaka, Shinobu Ohya

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Clarification of the electronic structure near the Fermi level is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor GaMnAs. Here, we perform ultrafast transient reflectivity spectra measurement, which is a powerful tool for selective detection of absorption edges in GaMnAs. The results show that the Fermi level of GaMnAs exists in the band gap. By using the Kramers-Kronig relation, we find the Mn-induced electronic states around the Fermi level, confirming that the ferromagnetism is stabilized by spin-polarized impurity-band holes.

Original languageEnglish
Article number241303
JournalPhysical Review B
Volume93
Issue number24
DOIs
Publication statusPublished - 2016 Jun 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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