Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

M. Kitamura, I. Ohkubo, M. Matsunami, K. Horiba, H. Kumigashira, Y. Matsumoto, H. Koinuma, M. Oshima

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29 Citations (Scopus)

Abstract

Electronic structures of La2NiMnO6 epitaxial films are characterized using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy. X-ray absorption spectra reveal that the valence states of Ni2+ and Mn4+ are dominant. The electronic structure at the valence band maximum is mainly derived from the Mn 3d state. The conduction band minimum is composed mostly of the Mn 3d-O 2p hybridized state. The optical gap is estimated to be about 1.5 eV based on the optical conductivity derived from optical spectra.

Original languageEnglish
Article number262503
JournalApplied Physics Letters
Volume94
Issue number26
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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