TY - JOUR
T1 - Electronic structure and oxygen ion conductivity of as-deposited Ce0.90Sm0.10O2-δ thin film prepared by RF magnetron sputtering
AU - Yamaguchi, Shohei
AU - Tasaki, Yuji
AU - Kobayashi, Masaki
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.
AB - The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.
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U2 - 10.7567/JJAP.54.06FJ04
DO - 10.7567/JJAP.54.06FJ04
M3 - Article
AN - SCOPUS:84930744921
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06FJ04
ER -