Electronic structure and oxygen ion conductivity of as-deposited Ce0.90Sm0.10O2-δ thin film prepared by RF magnetron sputtering

Shohei Yamaguchi; Yuji Tasaki; Masaki Kobayashi; Koji Horiba; Hiroshi Kumigashira; Tohru Higuchi

doi:10.7567/JJAP.54.06FJ04

Electronic structure and oxygen ion conductivity of as-deposited Ce_0.90Sm_0.10O_2-δ thin film prepared by RF magnetron sputtering

Shohei Yamaguchi, Yuji Tasaki, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The physical properties and electronic structure of Sm-doped CeO₂ (Ce_0.90Sm_0.10O_2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al₂O₃(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce_0.90Sm_0.10O_2-δ thin film has the mixed valence states of Ce⁴⁺ and Ce³⁺. The electrical conductivity of Ce_0.90Sm_0.10O_2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO₂ thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce³⁺ (4f¹L) state in Ce_0.90Sm_0.10O_2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.

Original language	English
Article number	06FJ04
Journal	Japanese journal of applied physics
Volume	54
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.54.06FJ04
Publication status	Published - 2015 Jun 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Electronic structure and oxygen ion conductivity of as-deposited Ce0.90Sm0.10O2-δ thin film prepared by RF magnetron sputtering",

abstract = "The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.",

author = "Shohei Yamaguchi and Yuji Tasaki and Masaki Kobayashi and Koji Horiba and Hiroshi Kumigashira and Tohru Higuchi",

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AU - Yamaguchi, Shohei

AU - Tasaki, Yuji

AU - Kobayashi, Masaki

AU - Horiba, Koji

AU - Kumigashira, Hiroshi

AU - Higuchi, Tohru

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.

AB - The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.

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Electronic structure and oxygen ion conductivity of as-deposited Ce_0.90Sm_0.10O_2-δ thin film prepared by RF magnetron sputtering

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