Electronic structure and oxygen ion conductivity of as-deposited Ce0.90Sm0.10O2-δ thin film prepared by RF magnetron sputtering

Shohei Yamaguchi, Yuji Tasaki, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The physical properties and electronic structure of Sm-doped CeO2 (Ce0.90Sm0.10O2-δ) in the thin-film form have been studied. The as-deposited thin film exhibits (111) orientation on an Al2O3(0001) substrate. The lattice constant of the thin film is larger than that of the bulk crystal. The Ce0.90Sm0.10O2-δ thin film has the mixed valence states of Ce4+ and Ce3+. The electrical conductivity of Ce0.90Sm0.10O2-δ thin film in the temperature region from 200 to 700 °C is higher than that of the undoped CeO2 thin film and is independent of the oxygen partial pressure, indicating the occurrence of high oxygen-ion conduction. The valence band consists of the O 2p state hybridized with the Ce 4f state. The 40% Ce3+ (4f1L) state in Ce0.90Sm0.10O2-δ thin film, which was estimated from the resonant photoemission spectra, contributes to the high oxygen-ion conduction and low activation energy.

Original languageEnglish
Article number06FJ04
JournalJapanese journal of applied physics
Volume54
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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