Electronic state of the carbon 60 adsorbed silicon surfaces

Kazuyuki Sakamoto, Daiyu Kondo, Yoshimitsu Ushimi, Akio Kimura, Akito Kakizaki, Shozo Suto

Research output: Contribution to journalArticlepeer-review


We have investigated the coverage-dependent electronic structures of C60 molecules adsorbed on the Si(111)-(7×7) and Si(001)-(2×1) surfaces using photoelectron spectroscopy. The valence band spectra show that the highest occupied molecular orbital (HOMO) of a C60 molecule splits into two peaks on both surfaces at a coverage lower than 0.25 monolayer. These split peaks are assigned to be the shifted HOMO and the bonding state, with the polarization-dependent measurements and the Si 2p core level spectra. The binding energies of the molecular orbitals and the C 1s core level show a small shift on the Si(001)-(2×1) surface, and no shift on the Si(111)-(7×7) surface with decreasing the coverage. These results indicate that the strong interaction between C60 molecules and the surfaces has a covalent character on the Si(111)-(7×7) surface, and both covalent and ionic characters on the Si(001)-(2×1) surface. We attribute the difference in the charge states of C60 molecules to the different surface structures.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Issue number3
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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