Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1-xPx crystals

H. Yugami, S. Nakashima, M. Hangyo, K. Sakai, A. Mitsuishi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Raman scattering from photo-created free carriers in undoped GaP and GaAs1-xPx (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.

Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalSolid State Communications
Volume55
Issue number2
DOIs
Publication statusPublished - 1985 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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