Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

Manabu Kiguchi, Genki Yoshikawa, Susumu Ikeda, Koichiro Saiki

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x-ray absorption fine structure (NEXAFS) and by comparing the cation and anion-edge NEXAFS. The thickness-dependent NEXAFS shows that the decay length of MIGS depends on an alkali-halide rather than a metal, and it is larger for alkali-halides with smaller band gap energies. By comparing the Cl-edge and K-edge NEXAFS for KClCu (001), MIGS are found to be states localizing at anion sites.

Original languageEnglish
Article number153401
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number15
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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