Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys

Y. Ohno

doi:10.1016/j.physb.2005.12.210

Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys

Y. Ohno

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.

Original language	English
Pages (from-to)	845-848
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.210
Publication status	Published - 2006 Apr 1
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Keywords

Antiphase boundaries
CuPt-ordered GaInP alloys
Polarized cathodoluminescence spectroscopy in a transmission electron microscope

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{fdb12b51cf51402d8c9a387ae0fa2360,

title = "Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys",

abstract = "Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.",

keywords = "Antiphase boundaries, CuPt-ordered GaInP alloys, Polarized cathodoluminescence spectroscopy in a transmission electron microscope",

author = "Y. Ohno",

note = "Funding Information: This work was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientist (A)(2) no.15681006, 2003–2005. GaInP alloys were provided by Mitsubishi Chemical Co. I am gratefully acknowledged to Prof. S. Takeda for use of the experimental facilities and for fruitful discussion and comments.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.210",

language = "English",

volume = "376-377",

pages = "845--848",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys

AU - Ohno, Y.

N1 - Funding Information: This work was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientist (A)(2) no.15681006, 2003–2005. GaInP alloys were provided by Mitsubishi Chemical Co. I am gratefully acknowledged to Prof. S. Takeda for use of the experimental facilities and for fruitful discussion and comments.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.

AB - Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.

KW - Antiphase boundaries

KW - CuPt-ordered GaInP alloys

KW - Polarized cathodoluminescence spectroscopy in a transmission electron microscope

UR - http://www.scopus.com/inward/record.url?scp=33645229159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645229159&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.210

DO - 10.1016/j.physb.2005.12.210

M3 - Conference article

AN - SCOPUS:33645229159

VL - 376-377

SP - 845

EP - 848

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -