Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.

Original languageEnglish
Pages (from-to)845-848
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Antiphase boundaries
  • CuPt-ordered GaInP alloys
  • Polarized cathodoluminescence spectroscopy in a transmission electron microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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