Abstract
Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.
| Original language | English |
|---|---|
| Pages (from-to) | 845-848 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 376-377 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Apr 1 |
| Externally published | Yes |
| Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29 |
Keywords
- Antiphase boundaries
- CuPt-ordered GaInP alloys
- Polarized cathodoluminescence spectroscopy in a transmission electron microscope
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering