Electronic properties of amorphous indium-gallium-zinc oxide thin film fabricated by magnetron sputtering

Mingjie Cao, Ming Zhao, Daming Zhuang, Li Guo, Liangqi Ouyang, Xiaolong Li, Jun Song

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous indium- gallium- zinc oxide (a-IGZO) thin films were fabricated using mid-frequency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The influence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal to that of the target. The change of sputtering current had no significant effect on the electronic properties. But the carrier concentration of the samples exhibited an obvious change as the increase of the O2 flow rate, which slightly increased and then rapidly decreased. The samples with higher carrier concentration exhibited larger Hall mobility. The average transmission of the IGZO thin films deposited with large O2 flow rate is above 90%.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalCailiao Yanjiu Xuebao/Chinese Journal of Materials Research
Volume29
Issue number1
Publication statusPublished - 2015 Jan 25

Keywords

  • Amorphous semiconductors
  • IGZO thin film
  • Inorganic non- metallic materials
  • Magnetron
  • Mobility
  • sputtering

ASJC Scopus subject areas

  • Materials Science(all)

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