TY - JOUR
T1 - Electronic properties of a photochemical oxide-GaAs interface
AU - Sawada, Takayuki
AU - Hasegawa, Hideki
AU - Ohno, Hideo
PY - 1987/11
Y1 - 1987/11
N2 - The properties of a GaAs–oxide interface formed by recently proposed photochemical oxidation in water were studied. Remarkable photoluminescence intensity enhancement was observed after oxidation which previously was interpreted as “unpinning” of the Fermi level. However, the surface current transport and capacitance-voltage measurements consistently indicated a strong Fermi level pinning with an increased surface depletion. These apparently contradictory results can be explained by a new model in which photochemical oxidation does not unpin, but shifts the pinning position of the Fermi level towards the valence band edge.
AB - The properties of a GaAs–oxide interface formed by recently proposed photochemical oxidation in water were studied. Remarkable photoluminescence intensity enhancement was observed after oxidation which previously was interpreted as “unpinning” of the Fermi level. However, the surface current transport and capacitance-voltage measurements consistently indicated a strong Fermi level pinning with an increased surface depletion. These apparently contradictory results can be explained by a new model in which photochemical oxidation does not unpin, but shifts the pinning position of the Fermi level towards the valence band edge.
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U2 - 10.1143/JJAP.26.L1871
DO - 10.1143/JJAP.26.L1871
M3 - Article
AN - SCOPUS:0023452355
VL - 26
SP - L1871-L1873
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 A
ER -