Electronic properties of a photochemical oxide-GaAs interface

Takayuki Sawada, Hideki Hasegawa, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The properties of a GaAs–oxide interface formed by recently proposed photochemical oxidation in water were studied. Remarkable photoluminescence intensity enhancement was observed after oxidation which previously was interpreted as “unpinning” of the Fermi level. However, the surface current transport and capacitance-voltage measurements consistently indicated a strong Fermi level pinning with an increased surface depletion. These apparently contradictory results can be explained by a new model in which photochemical oxidation does not unpin, but shifts the pinning position of the Fermi level towards the valence band edge.

Original languageEnglish
Pages (from-to)L1871-L1873
JournalJapanese journal of applied physics
Issue number11 A
Publication statusPublished - 1987 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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