Abstract
In order to study and model non-ideal semiconductor-semiconductor interfaces, three kinds of GaAs interfaces, i.e., (i) a slightly mismatched InGaAs GaAs interface, (ii) a highly mismatched GaAs InP interface and (iii) an air-exposed GaAs GaAs interface, were prepared by MOVPE. Their electronic properties were studied through measurements of C-V characteristics, carrier concentration profiles, DLTS spectra and I-V characteristics. By a novel interpretation of C-V characteristics and DLTS spectra, all the experimental results were explained consistently by a common model involving a U-shaped interface state continuum. The origin of the interface state continuum is explained by the disorder induced gap state (DIGS) model recently proposed for insulator-semiconductor and metal-semiconductor interfaces. This model seems to serve as a universal model for non-ideal S-S interfaces.
Original language | English |
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Pages (from-to) | 180-187 |
Number of pages | 8 |
Journal | Japanese journal of applied physics |
Volume | 27 |
Issue number | 2R |
DOIs | |
Publication status | Published - 1988 Feb |
Externally published | Yes |
Keywords
- Air-exposed regrown GaAs/GaAs interface
- Disorder induced gap state (DIGS) model
- Gaas/InP
- Ingaas/GaAs
- Lattice-mismatched interface
- Metalorganic vapor phase epitaxy
- Non-ideal semiconductor-semiconductor interface
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)