Electronic properties and modeling of lattice-mismatched and regrown GaAs interfaces prepared by metalorganic vapor phase epitaxy

Eiji Ikeda, Hideki Hasegawa, Shunsuke Ohtsuka, Hideo Ohno

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

In order to study and model non-ideal semiconductor-semiconductor interfaces, three kinds of GaAs interfaces, i.e., (i) a slightly mismatched InGaAs GaAs interface, (ii) a highly mismatched GaAs InP interface and (iii) an air-exposed GaAs GaAs interface, were prepared by MOVPE. Their electronic properties were studied through measurements of C-V characteristics, carrier concentration profiles, DLTS spectra and I-V characteristics. By a novel interpretation of C-V characteristics and DLTS spectra, all the experimental results were explained consistently by a common model involving a U-shaped interface state continuum. The origin of the interface state continuum is explained by the disorder induced gap state (DIGS) model recently proposed for insulator-semiconductor and metal-semiconductor interfaces. This model seems to serve as a universal model for non-ideal S-S interfaces.

Original languageEnglish
Pages (from-to)180-187
Number of pages8
JournalJapanese journal of applied physics
Volume27
Issue number2R
DOIs
Publication statusPublished - 1988 Feb
Externally publishedYes

Keywords

  • Air-exposed regrown GaAs/GaAs interface
  • Disorder induced gap state (DIGS) model
  • Gaas/InP
  • Ingaas/GaAs
  • Lattice-mismatched interface
  • Metalorganic vapor phase epitaxy
  • Non-ideal semiconductor-semiconductor interface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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