Electronic passivation of GaAs surfaces by electrodeposition of organic molecules containing reactive sulfur

Keisuke Asai, T. Miyashita, K. Ishigure, S. Fukatsu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A scheme for the surface passivation of GaAs is demonstrated by using electrolytically deposited organic thin molecular layers with terminating reactive sulfur (-S-) atoms. This method has an advantage, as a way of fabricating insulator on GaAs, that it is essentially free from surface layer damage which would otherwise be produced when conventional energetic processes are employed to make up insulating layers. Steady-state photoluminescence, Raman scattering, and x-ray photoelectron spectroscopy were used to characterize electronic properties of the passivated surface. Significant reduction both in the surface recombination rate and the adverse band bending due to surface states is shown by implementing an insulator layer created with a simplified process.

Original languageEnglish
Pages (from-to)1582-1586
Number of pages5
JournalJournal of Applied Physics
Volume77
Issue number4
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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