Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors

A. Sugimoto, S. Kashiwaya, H. Eisaki, H. Kashiwaya, H. Tsuchiura, Y. Tanaka, K. Fujita, S. Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The local electronic properties of Bi2Sr1.6Ln 0.4CuO6+y, (Ln = La, Gd) is investigated by scanning tunneling microscopy/spectroscopy (STM/STS). As increasing the magnitude of out-of-plane disorder by increasing the mismatch of Ln-ion doping, enlargement of deviation of Δ (σΔ) is detected. The value of σΔ is linearly enhanced as decreasing Tc including the results of optimum Bi2Sr2CaCu2O8+y. These results suggest the out-of-plane disorder suppresses the superconductivity and enhances pseudogap regions in superconducting state efficiently.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages507-508
Number of pages2
DOIs
Publication statusPublished - 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period06/8/1006/10/17

Keywords

  • Bi2201
  • High-T superconductor
  • Inhomogeneity
  • STM/STS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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