Electronic conduction mechanism and defect chemical model of LaNi0.4Fe0.6O3 − δ

R. A. Budiman, H. J. Hong, Shinichi Hashimoto, T. Nakamura, K. Yamaji, K. Yashiro, K. Amezawa, T. Kawada

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In order to elucidate the electronic conduction mechanism and defect chemical model of LaNi0.4Fe0.6O3 − δ at high temperatures, electrical conductivity (σ), Seebeck coefficient (S), and oxygen vacancy concentration (δ) of LaNi0.4Fe0.6O3 − δ were measured as a function of oxygen partial pressure (p(O2)) and temperature. Relatively large σ and small positive S values are observed, which indicates the contribution of ionic conduction is negligibly small to thermoelectric power and the major electronic carrier is a hole. From the analysis of σ and S, it is expected that the LaNi0.4Fe0.6O3 − δ has small polaron hopping conduction mechanism where an electron is localized on the Fe. The slope of δ vs p(O2) shows a minimum value near the stoichiometric composition and the δ increases as p(O2) reduces and temperature increases. The relationship between δ vs. log p(O2) is analyzed by a localized electron model and the behavior of the oxygen nonstoichiometry of LaNi0.4Fe0.6O3 − δ can be explained.

Original languageEnglish
Pages (from-to)148-153
Number of pages6
JournalSolid State Ionics
Volume310
DOIs
Publication statusPublished - 2017 Nov 1

Keywords

  • Conduction mechanism
  • Defect model
  • Oxygen nonstoichiometry

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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