Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin films

Akira Chikamatsu, Toshiya Matsuyama, Tsukasa Katayama, Yasushi Hirose, Hiroshi Kumigashira, Masaharu Oshima, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We investigated the electronic and carrier transport properties of Eu-substituted infinite-layered SrFeO2 (Eu:SrFeO2) epitaxial thin films. X-ray photoemission and absorption spectroscopy measurements revealed that the Fe and Eu ions in the Eu:SrFeO2 films were essentially divalent and trivalent, respectively, regardless of the Eu ion content. Based on the transport measurements performed at 300 K, the carrier concentration (ne) and Hall mobility of the Eu:SrFeO2 (x=0.15) films were found to be 2.5 × 1019 cm-3 and 0.94 cm2 V-1 s-1, respectively. The carrier activation efficiency of Eu3+, defined as ne/n Eu (where nEu is the Eu ion concentration), was as low as ∼0.9%. We speculate that excess oxygen atoms incorporated between FeO 2 sheets behave as carrier compensators and/or strong scatterers.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Keywords

  • Characterization
  • Doping
  • Laser epitaxy
  • Oxides
  • Semiconducting materials
  • Topotaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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