TY - JOUR
T1 - Electronic and structural properties of Laves-phase MgZn2 of varying chemical disorder
AU - Andersson, M.
AU - De Boissieu, M.
AU - Brühne, S.
AU - Drescher, C.
AU - Assmus, W.
AU - Ohahshi, S.
AU - Tsai, A. P.
AU - Mihalkovič, M.
AU - Krajčí, M.
AU - Rapp, Ö
PY - 2010/7/13
Y1 - 2010/7/13
N2 - The C14 Laves-phase MgZn2 has been investigated from 30 to 36 at. % Mg. In this way chemical disorder can be monitored over a limited concentration range and the influence on electron properties can be investigated. Our studies include thermodynamic calculations of atomic configurations of Mg and Zn at off-stoichiometric compositions, electronic-transport measurements, and electronic band-structure calculations of MgZn2. The disorder introduced by alloying was found to be substitutional for all C14 alloys, and to have a markedly stronger effect on resistivity and magnetoresistance, Δρ (B) /ρ (0), on the Mg-rich side due to strain introduced when Mg substitutes for Zn. ρ(T) and Hall constant were characteristic for weakly disordered binary alloys. Δρ/ρ of MgZn2 was large, reached 6 at 4.2 K and 8 T, and decreased strongly at off-stoichiometric compositions. The results are discussed in view of the band-structure results and in terms of relations between atomic order and electronic properties. Several properties were found to resemble pure Zn. An empirical correlation over more than six orders of magnitude in Δρ/ρ was found for Zn and Zn-based alloys.
AB - The C14 Laves-phase MgZn2 has been investigated from 30 to 36 at. % Mg. In this way chemical disorder can be monitored over a limited concentration range and the influence on electron properties can be investigated. Our studies include thermodynamic calculations of atomic configurations of Mg and Zn at off-stoichiometric compositions, electronic-transport measurements, and electronic band-structure calculations of MgZn2. The disorder introduced by alloying was found to be substitutional for all C14 alloys, and to have a markedly stronger effect on resistivity and magnetoresistance, Δρ (B) /ρ (0), on the Mg-rich side due to strain introduced when Mg substitutes for Zn. ρ(T) and Hall constant were characteristic for weakly disordered binary alloys. Δρ/ρ of MgZn2 was large, reached 6 at 4.2 K and 8 T, and decreased strongly at off-stoichiometric compositions. The results are discussed in view of the band-structure results and in terms of relations between atomic order and electronic properties. Several properties were found to resemble pure Zn. An empirical correlation over more than six orders of magnitude in Δρ/ρ was found for Zn and Zn-based alloys.
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U2 - 10.1103/PhysRevB.82.024202
DO - 10.1103/PhysRevB.82.024202
M3 - Article
AN - SCOPUS:77956545170
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 2
M1 - 024202
ER -