Electronic and magnetic properties of 3d transition-metal-doped GaAs

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Abstract

Electronic band-structure calculations are carried out for the hypothetical zinc-blende phase of 3d transition-metal monoarsenides as well as periodic supercells of 3d transition-metal-doped GaAs by using the full-potential linearized augmented-plane-wave method. The antiferromagnetic state is stable for zinc-blende FeAs, while the ferromagnetic state is stable for zinc-blende VAs, CrAs, and MnAs. It is expected that (Ga,Cr)As becomes ferromagnetic due to the presence of mobile valence-band carriers (holes), since the electronic band-structure in the ferromagnetic state of (Ga,Cr)As is very similar to that of (Ga,Mn)As.

Original languageEnglish
Pages (from-to)143-147
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume10
Issue number1-3
DOIs
Publication statusPublished - 2001 May 1
Externally publishedYes

Keywords

  • Diluted magnetic semiconductors
  • Electronic band-structure calculation
  • Ferromagnetic materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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