Electronic and chemical state analysis of oxide heterointerfaces using in situ synchrotron radiation photoemission spectroscopy

Hiroshi Kumigashira, Masaharu Oshima

Research output: Contribution to journalArticle

Abstract

We constructed a high-resolution, high-throughput photoemission spectroscopy (PES) system combined with a combinatorial laser molecular-beam epitaxy thin-film growth system in order to realize in-situ characterization for electronic structures of transition-metal oxide (TMO) heterointerfaces. The elemental selectivity of the PES technique using synchrotron radiation enables us to extract the electronic structure of constituent layers in the vicinity of the heterointerface. Direct observation of the interfacial electronic structures is a key to understanding the physical and chemical properties of junctions based on TMO. The capabilities of the technique have been demonstrated by the in-situ resonant PES analysis of La0.6Sr0.4MnO3 layers buried in insulating perovskite oxides, such as La0.6Sr 0.4FeO3 and SrTiO3 (STO).

Original languageEnglish
Pages (from-to)409-418
Number of pages10
JournalBUNSEKI KAGAKU
Volume56
Issue number6
DOIs
Publication statusPublished - 2007 Nov 15
Externally publishedYes

Keywords

  • Electronic structure
  • Heterointerface
  • Photoemission
  • Synchrotron radiation
  • Transition-metal oxide

ASJC Scopus subject areas

  • Analytical Chemistry

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