Abstract
Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.
Original language | English |
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Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 34 |
Issue number | 5 B |
Publication status | Published - 1995 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)