Electron tunneling through chemical oxide of silicon

Kenji Saito, Masanori Matsuda, Masatoshi Yasutake, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume34
    Issue number5 B
    Publication statusPublished - 1995

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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