Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 B|
|Publication status||Published - 1995|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)