Electron tunneling through chemical oxide of silicon

Kenji Saito; Masanori Matsuda; Masatoshi Yasutake; Takeo Hattori

Electron tunneling through chemical oxide of silicon

Kenji Saito, Masanori Matsuda, Masatoshi Yasutake, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

Abstract

Carrier transport between gold and n⁺-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H₂SO₄ and H₂O₂ that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	34
Issue number	5 B
Publication status	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Electron tunneling through chemical oxide of silicon",

abstract = "Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.",

author = "Kenji Saito and Masanori Matsuda and Masatoshi Yasutake and Takeo Hattori",

year = "1995",

language = "English",

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T1 - Electron tunneling through chemical oxide of silicon

AU - Saito, Kenji

AU - Matsuda, Masanori

AU - Yasutake, Masatoshi

AU - Hattori, Takeo

PY - 1995

Y1 - 1995

N2 - Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

AB - Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

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M3 - Article

AN - SCOPUS:0029308394

VL - 34

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -

Electron tunneling through chemical oxide of silicon

Abstract

ASJC Scopus subject areas

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