Electron tunneling through chemical oxide of silicon

T. Hattori, K. Watanabe, M. Ohashi, M. Matsuda, M. Yasutake

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Carrier transport between gold and n + -Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.

    Original languageEnglish
    Pages (from-to)86-89
    Number of pages4
    JournalApplied Surface Science
    Volume102
    DOIs
    Publication statusPublished - 1996 Aug

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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