Electron tunneling between Si quantum dots and tow dimensional electron gas under optical excitation at low temperatures

Y. Sakurai, Y. Takada, J. I. Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present results of the electron tunneling between Si-dots and the two-dimensional electron gas (2DEG) under the optical excitation at low temperatures, where modification of the 2DEG is caused by optical generation of the electron-hole pairs. We have found that the gate voltage for electron injection to Sidots becomes remarkably smaller with increase in optical excitation intensity, while the gate voltage for electron emission shows little dependence. The difference in the observed dependences of the gate voltage for electron injection and emission process is explained our proposal which consider the geometrical matching of initial and final state electron wave functions.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Pages369-374
Number of pages6
Edition1
ISBN (Print)9781566777919
DOIs
Publication statusPublished - 2010 Jan 1

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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