Electron-temperature control by varying dc voltage to a mesh grid covered by thin film in plasmas

Kohgi Kato; Jyunichi Emi; Satoru Iizuka

doi:10.1016/j.tsf.2006.02.049

Electron-temperature control by varying dc voltage to a mesh grid covered by thin film in plasmas

Kohgi Kato, Jyunichi Emi, Satoru Iizuka

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We discuss theoretically how the resistance of a film deposited on the metal grid affects the efficiency of electron-temperature control by employing a grid-bias method, in which, by using a naked metal grid, the electron temperature decreases from 3.4 to 0.12 eV with a decrease in the grid potential from 40 to - 60 V, being accompanied by an electron-density increase from 0.6 × 10⁹ cm^{- 3} to 6.0 × 10⁹ cm^{- 3} at an argon gas pressure of 5.0 mTorr. The electron temperature can be varied even when the grid is covered with a film with finite resistance, although the range of electron temperature variation is restricted. This method is applicable to reactive plasmas in which grids are often covered by films with finite resistance.

Original language	English
Pages (from-to)	4094-4097
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2006.02.049
Publication status	Published - 2007 Mar 12

Keywords

Electron temperature control
Film resistance
Grid bias method
Reactive plasma

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.02.049

Cite this

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title = "Electron-temperature control by varying dc voltage to a mesh grid covered by thin film in plasmas",

abstract = "We discuss theoretically how the resistance of a film deposited on the metal grid affects the efficiency of electron-temperature control by employing a grid-bias method, in which, by using a naked metal grid, the electron temperature decreases from 3.4 to 0.12 eV with a decrease in the grid potential from 40 to - 60 V, being accompanied by an electron-density increase from 0.6 × 109 cm- 3 to 6.0 × 109 cm- 3 at an argon gas pressure of 5.0 mTorr. The electron temperature can be varied even when the grid is covered with a film with finite resistance, although the range of electron temperature variation is restricted. This method is applicable to reactive plasmas in which grids are often covered by films with finite resistance.",

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T1 - Electron-temperature control by varying dc voltage to a mesh grid covered by thin film in plasmas

AU - Kato, Kohgi

AU - Emi, Jyunichi

AU - Iizuka, Satoru

PY - 2007/3/12

Y1 - 2007/3/12

N2 - We discuss theoretically how the resistance of a film deposited on the metal grid affects the efficiency of electron-temperature control by employing a grid-bias method, in which, by using a naked metal grid, the electron temperature decreases from 3.4 to 0.12 eV with a decrease in the grid potential from 40 to - 60 V, being accompanied by an electron-density increase from 0.6 × 109 cm- 3 to 6.0 × 109 cm- 3 at an argon gas pressure of 5.0 mTorr. The electron temperature can be varied even when the grid is covered with a film with finite resistance, although the range of electron temperature variation is restricted. This method is applicable to reactive plasmas in which grids are often covered by films with finite resistance.

AB - We discuss theoretically how the resistance of a film deposited on the metal grid affects the efficiency of electron-temperature control by employing a grid-bias method, in which, by using a naked metal grid, the electron temperature decreases from 3.4 to 0.12 eV with a decrease in the grid potential from 40 to - 60 V, being accompanied by an electron-density increase from 0.6 × 109 cm- 3 to 6.0 × 109 cm- 3 at an argon gas pressure of 5.0 mTorr. The electron temperature can be varied even when the grid is covered with a film with finite resistance, although the range of electron temperature variation is restricted. This method is applicable to reactive plasmas in which grids are often covered by films with finite resistance.

KW - Electron temperature control

KW - Film resistance

KW - Grid bias method

KW - Reactive plasma

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Electron-temperature control by varying dc voltage to a mesh grid covered by thin film in plasmas

Abstract

Keywords

ASJC Scopus subject areas

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